Innovative 3D floating physique cell with a singular dual-gate construction delivers excessive sensing margins, retention occasions, and endurance cycles.

San Jose, California — December 11, 2023 – NEO Semiconductor, a number one developer of progressive applied sciences for 3D NAND flash and DRAM reminiscence, at this time introduced findings of 3D X-DRAM™ simulations . Semiconductor producers and engineers use TCAD to simulate rising applied sciences and optimize new merchandise.

Explorations of TCAD fashions and simulations reveal that 3D X-DRAM helps:

• < 1 V (volt) operation voltage.
• < 3 ns (nanosecond) write time (cell degree).
• > 20 uA (microampere) sensing margin.
• > 100 ms (millisecond) information retention time.
• > 10ˆ16 (10 quadrillion) endurance cycles.

“Semiconductor manufacturers rely on TCAD tools to accelerate development and optimize products using virtual experiments rather than physical ones,” mentioned Andy Hsu, Founder and CEO of NEO Semiconductor and an completed know-how inventor with greater than 120 U.S. patents. “We use these same tools to create models and run simulations demonstrating the feasibility of adopting 3D X-DRAM technology to bring 3D DRAM products to market.”

3D X-DRAM makes use of progressive Floating Body Cell (FBC) know-how with one transistor and 0 capacitors for every information bit. A easy 3D construction makes 3D X-DRAM much less dangerous and expensive than 3D DRAM alternate options. Manufacturing 3D X-DRAM entails a self-aligned, 3D NAND-like course of with excessive yields. NEO estimates 3D X-DRAM achieves 128 Gb density with 230 layers—4 occasions higher than 2D DRAM.

“A new memory architecture with 3D DRAM technology will represent the future of memory in order to accelerate and scale DRAM to new levels,” mentioned Jay Kramer President of Network Storage Advisors Inc. “NEO Semiconductor is leading the way with an innovative design that not only will address new levels of performance, reduced power consumption and smaller footprint but will be the first to power the next generation of memory that can enable new applications in the marketplace.”

NEO Semiconductor will give an invited speech about 3D X-DRAM within the 16^th IEEE International Memory Workshop (IMW) being held May 12^th-15^th, 2024 in Seoul, Republic of Korea. Andy Hsu, CEO will launch extra TCAD Simulation Results for this ground-breaking know-how. Interested events are invited to request a gathering with NEO’s administration by contacting mayalustig@neosemic.com. IMW is sponsored by the IEEE Electron Devices Society and designed to collect the reminiscence neighborhood to debate applied sciences, purposes, methods, and markets.

About NEO Semiconductor

NEO Semiconductor is a high-tech firm targeted on advancing 3D NAND flash and DRAM applied sciences. The firm was based in 2012 by Andy Hsu and a workforce in San Jose, California, and owns greater than 24 U.S. patents. In 2020, the corporate made a breakthrough in 3D NAND structure named X-NAND™ that may obtain SLC efficiency from TLC and QLC reminiscence to offer high-speed, low-cost options for a lot of purposes, together with 5G and AI. In 2022, the corporate launched its X-DRAM™ know-how, representing a brand new structure that may ship DRAM with the world’s lowest energy consumption. In 2023, NEO launched its ground-breaking 3D X-DRAM™ know-how, a recreation changer within the reminiscence business, enabling the world’s first 3D NAND-like DRAM to unravel capability scaling bottlenecks and transfer the market previous the constraints of 2D DRAM. For extra info, go to https://neosemic.com/.